Voltage and power reductions in our products come from a broad engagement between process, design and architecture. For our latest 45nm products, the careful design of the SRAM cell and our invention of high-k metal gate transistors were key contributors … Continue reading →

Now that the dust has settled from the 6th Annual Research At Intel Day press event, I am still amazed at the breadth and variety of research projects that were on display. Researchers from Israel, China, Russia and the US … Continue reading →